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N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 Toshiba TK72E12N1,S1X(S
  • SGD3.312
    Each (In a Pack of 5)
N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 Toshiba TK72E12N1,S1X(S
  • Channel TypeN
  • Maximum Continuous Drain Current72 A
  • Maximum Drain Source Voltage120 V
  • SeriesTK
  • Package TypeTO-220
See similar products in MOSFETs
Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • SGD6.672
    Each (In a Tube of 25)
Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 Toshiba TK72E12N1,S1X(S
  • SGD3.312
    Each (In a Pack of 5)
  • Also available in industry standard packaging
N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 Toshiba TK72E12N1,S1X(S
  • Channel TypeN
  • Maximum Continuous Drain Current72 A
  • Maximum Drain Source Voltage120 V
  • Package TypeTO-220
  • SeriesTK
See similar products in MOSFETs
N-Channel MOSFET, 42 A, 120 V, 3-Pin TO-220SIS Toshiba TK42A12N1,S4X(S
  • SGD2.462
    Each (In a Pack of 5)
  • Also available in industry standard packaging
N-Channel MOSFET, 42 A, 120 V, 3-Pin TO-220SIS Toshiba TK42A12N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current42 A
  • Maximum Drain Source Voltage120 V
  • SeriesTK
  • Package TypeTO-220SIS
See similar products in MOSFETs
N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-3PN Toshiba TK39J60W5,S1VQ(O
  • SGD5.98Each
N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-3PN Toshiba TK39J60W5,S1VQ(O
  • Channel TypeN
  • Maximum Continuous Drain Current39 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-3PN
  • SeriesDTMOSIV
See similar products in MOSFETs
N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN Toshiba TK9J90E
  • SGD4.776
    Each (In a Tube of 25)
N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN Toshiba TK9J90E
  • Channel TypeN
  • Maximum Continuous Drain Current9 A
  • Maximum Drain Source Voltage900 V
  • Package TypeTO-3PN
  • SeriesTK
See similar products in MOSFETs
Toshiba 2SC5200-O(S1,F,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PL
  • SGD4.076
    Each (In a Pack of 5)
Toshiba 2SC5200-O(S1,F,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PL
  • Transistor TypeNPN
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
Toshiba RN1108(F) NPN Digital Transistor, 100 mA, 50 V, 3-Pin ESM
  • SGD0.158
    Each (In a Pack of 5)
Toshiba RN1108(F) NPN Digital Transistor, 100 mA, 50 V, 3-Pin ESM
  • Transistor TypeNPN
  • Maximum DC Collector Current100 mA
  • Maximum Collector Emitter Voltage50 V
  • Package TypeESM
  • Mounting TypeSurface Mount
See similar products in Bipolar Transistors
N-Channel MOSFET, 42 A, 120 V, 3-Pin TO-220SIS Toshiba TK42A12N1,S4X(S
  • SGD1.601
    Each (In a Tube of 50)
N-Channel MOSFET, 42 A, 120 V, 3-Pin TO-220SIS Toshiba TK42A12N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current42 A
  • Maximum Drain Source Voltage120 V
  • SeriesTK
  • Package TypeTO-220SIS
See similar products in MOSFETs
N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-346 Toshiba 2SK1062(F)
  • SGD0.968
    Each (In a Pack of 10)
N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-346 Toshiba 2SK1062(F)
  • Channel TypeN
  • Maximum Continuous Drain Current200 mA
  • Maximum Drain Source Voltage60 V
  • Series2SK
  • Package TypeSOT-346
See similar products in MOSFETs
Toshiba 2SA2097(TE16L1,NQ) PNP Transistor, -5 A, -50 V, 3-Pin DPAK
  • SGD1.068
    Each (In a Pack of 5)
Toshiba 2SA2097(TE16L1,NQ) PNP Transistor, -5 A, -50 V, 3-Pin DPAK
  • Transistor TypePNP
  • Maximum DC Collector Current5 A
  • Maximum Collector Emitter Voltage50 V
  • Package TypeDPAK (TO-252)
  • Mounting TypeSurface Mount
See similar products in Bipolar Transistors
N-Channel MOSFET, 42 A, 120 V, 3-Pin TO-220SIS Toshiba TK42A12N1,S4X(S
  • SGD1.196
    Each (In a Pack of 5)
N-Channel MOSFET, 42 A, 120 V, 3-Pin TO-220SIS Toshiba TK42A12N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current42 A
  • Maximum Drain Source Voltage120 V
  • SeriesTK
  • Package TypeTO-220SIS
See similar products in MOSFETs
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • SGD6.672
    Each (In a Tube of 25)
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
Toshiba RN1106(TE85L,F) NPN Digital Transistor, 100 mA, 50 V, 3-Pin ESM
  • SGD0.068
    Each (In a Pack of 5)
Toshiba RN1106(TE85L,F) NPN Digital Transistor, 100 mA, 50 V, 3-Pin ESM
  • Transistor TypeNPN
  • Maximum DC Collector Current100 mA
  • Maximum Collector Emitter Voltage50 V
  • Package TypeESM
  • Mounting TypeSurface Mount
See similar products in Bipolar Transistors
N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • SGD3.528
    Each (In a Pack of 5)
N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current263 A
  • Maximum Drain Source Voltage60 V
  • Package TypeTO-220SIS
  • SeriesTK
See similar products in MOSFETs
N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 Toshiba 2SK3564,S5Q(J
  • SGD1.904
    Each (In a Pack of 5)
N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 Toshiba 2SK3564,S5Q(J
  • Channel TypeN
  • Maximum Continuous Drain Current3 A
  • Maximum Drain Source Voltage900 V
  • Package TypeSC-67
  • Series2SK
See similar products in MOSFETs
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • SGD9.22Each
  • Also available in industry standard packaging
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN, Through Hole
  • SGD14.83Each
Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN, Through Hole
  • Maximum Continuous Collector Current40 A
  • Maximum Collector Emitter Voltage1800 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation375 W
  • Package TypeTO-3PN
See similar products in IGBTs
Toshiba 60V 1A, Schottky Diode, 2-Pin S-FLAT CRS12(T5L,TEMQ)
  • SGD0.179
    Each (In a Pack of 10)
Toshiba 60V 1A, Schottky Diode, 2-Pin S-FLAT CRS12(T5L,TEMQ)
  • Mounting TypeSurface Mount
  • Package TypeS-FLAT
  • Maximum Continuous Forward Current1A
  • Peak Reverse Repetitive Voltage60V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
Toshiba 2SC5358-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN
  • SGD2.888
    Each (In a Pack of 5)
Toshiba 2SC5358-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN
  • Transistor TypeNPN
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3PN
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
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