MOSFETs

MOSFETs, also known as MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223, TO-220 and SOIC.

What are depletion and enhancement modes?
MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?
The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs
MOSFETs are made of p-type or n-type doped silicon.
N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?
MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.

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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation
RS Stock No. 761-3515
Mfr. Part No.BUZ11-NR4941
SGD1.896
Each (In a Pack of 5)
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N 30 A 50 V 40 mΩ - 2.1V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 75 W
RS Stock No. 124-1349
Mfr. Part No.BUZ11_NR4941
SGD1.329
Each (In a Tube of 50)
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N 30 A 50 V 40 mΩ - 2.1V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 75 W
RS Stock No. 124-1310
Mfr. Part No.2N7000TA
SGD0.086
Each (On a Reel of 2000)
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N 200 mA 60 V 5 Ω - 0.3V -30 V, +30 V TO-92 Through Hole 3 Single Enhancement Small Signal 400 mW
RS Stock No. 903-4074
Mfr. Part No.2N7000-D26Z
SGD0.122
Each (In a Pack of 100)
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N 200 mA 60 V 9 Ω - 0.8V -40 V, +40 V TO-92 Through Hole 3 Single Enhancement Power MOSFET 400 mW
RS Stock No. 739-0224
Mfr. Part No.2N7000TA
SGD0.349
Each (In a Pack of 10)
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N 200 mA 60 V 5 Ω - 0.3V -30 V, +30 V TO-92 Through Hole 3 Single Enhancement Small Signal 400 mW
RS Stock No. 671-4733
Mfr. Part No.2N7000
SGD0.379
Each (In a Pack of 20)
units
N 200 mA 60 V 5 Ω - 0.8V -20 V, +20 V TO-92 Through Hole 3 Single Enhancement Small Signal 400 mW
RS Stock No. 169-8553
Mfr. Part No.2N7000
SGD0.093
Each (On a Reel of 10000)
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N 200 mA 60 V 5 Ω - 0.8V -20 V, +20 V TO-92 Through Hole 3 Single Enhancement Small Signal 400 mW
RS Stock No. 124-1400
Mfr. Part No.FQP30N06L
SGD1.548
Each (In a Tube of 50)
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N 32 A 60 V 45 mΩ - 1V -20 V, +20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 79 W
RS Stock No. 807-5863
Mfr. Part No.FQP30N06L
SGD1.846
Each (In a Pack of 5)
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N 32 A 60 V 45 mΩ - 1V -20 V, +20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 79 W
New
RS Stock No. 177-5488
Mfr. Part No.2N6845
BrandMagnatec
SGD65.811
Each (In a Tray of 30)
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P 4 A 100 V 690 mΩ 4V - -20 V, +20 V TO-39 Through Hole 3 Single Enhancement Power MOSFET 20 W
RS Stock No. 124-9024
Mfr. Part No.IRLB3034PBF
BrandInfineon
SGD3.382
Each (In a Tube of 50)
units
N 343 A 40 V 2 mΩ 2.5V 1V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 375 W
RS Stock No. 688-7204
Mfr. Part No.IRLB3034PBF
BrandInfineon
SGD5.315
Each (In a Pack of 2)
units
N 343 A 40 V 2 mΩ 2.5V 1V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 375 W
RS Stock No. 189-0668
Mfr. Part No.2N6845
BrandMagnatec
SGD38.30
Each
units
P 4 A 100 V 690 mΩ 4V - -20 V, +20 V TO-39 Through Hole 3 Single Enhancement Power MOSFET 20 W
RS Stock No. 415-354
Mfr. Part No.2SK3878(F)
BrandToshiba
SGD6.095
Each (In a Pack of 2)
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N 9 A 900 V 1.3 Ω 4V - -30 V, +30 V TO-3PN Through Hole 3 Single Enhancement Power MOSFET 150 W
RS Stock No. 166-2387
Mfr. Part No.HUFA76419D3ST
SGD0.926
Each (On a Reel of 2500)
units
N 20 A 60 V 37 mΩ 3V 1V -16 V, +16 V DPAK (TO-252) Surface Mount 3 Single Enhancement Power MOSFET 75 W
RS Stock No. 919-4713
Mfr. Part No.IRLML6401TRPBF
BrandInfineon
SGD0.142
Each (On a Reel of 3000)
units
P 4.3 A 12 V 50 mΩ 0.95V 0.4V -8 V, +8 V Micro Surface Mount 3 Single Enhancement Power MOSFET 1.3 W
RS Stock No. 862-9334
Mfr. Part No.HUFA76419D3ST
SGD1.219
Each (In a Pack of 10)
units
N 20 A 60 V 37 mΩ 3V 1V -16 V, +16 V DPAK (TO-252) Surface Mount 3 Single Enhancement Power MOSFET 75 W
RS Stock No. 301-316
Mfr. Part No.IRLML6401TRPBF
BrandInfineon
SGD0.31
Each (In a Pack of 5)
units
P 4.3 A 12 V 50 mΩ 0.95V 0.4V -8 V, +8 V Micro Surface Mount 3 Single Enhancement Power MOSFET 1.3 W
RS Stock No. 671-4736
Mfr. Part No.BS170
SGD0.485
Each (In a Pack of 10)
units
N 500 mA 60 V 5 Ω 3V 0.8V -20 V, +20 V TO-92 Through Hole 3 Single Enhancement Power MOSFET 830 mW
RS Stock No. 166-1723
Mfr. Part No.FDMA3023PZ
SGD0.438
Each (On a Reel of 3000)
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P 2.9 A 30 V 240 mΩ - 0.4V -8 V, +8 V MLP Surface Mount 6 Isolated Enhancement Power MOSFET 1.4 W
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