MOSFETs

MOSFETs, also known as MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement.Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

MOSFETs are made of p-type or n-type doped silicon.

  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?

MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.

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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 761-3515
Mfr. Part No.BUZ11-NR4941
SGD1.896
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N 30 A 50 V 40 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2.1V 75 W Single 1
RS Stock No. 124-1349
Mfr. Part No.BUZ11_NR4941
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N 30 A 50 V 40 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2.1V 75 W Single 1
RS Stock No. 739-0224
Mfr. Part No.2N7000TA
SGD0.438
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N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -30 V, +30 V Enhancement - 0.3V 400 mW Single 1
RS Stock No. 124-1310
Mfr. Part No.2N7000TA
SGD0.107
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N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -30 V, +30 V Enhancement - 0.3V 400 mW Single 1
RS Stock No. 169-8553
Mfr. Part No.2N7000
SGD0.175
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N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement - 0.8V 400 mW Single 1
RS Stock No. 903-4074
Mfr. Part No.2N7000-D26Z
SGD0.195
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N 200 mA 60 V 9 Ω TO-92 Through Hole 3 -40 V, +40 V Enhancement - 0.8V 400 mW Single 1
RS Stock No. 671-4733
Mfr. Part No.2N7000
SGD0.418
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N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement - 0.8V 400 mW Single 1
RS Stock No. 124-1400
Mfr. Part No.FQP30N06L
SGD1.601
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N 32 A 60 V 45 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement - 1V 79 W Single 1
RS Stock No. 807-5863
Mfr. Part No.FQP30N06L
SGD1.876
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N 32 A 60 V 45 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement - 1V 79 W Single 1
RS Stock No. 688-7204
Mfr. Part No.IRLB3034PBF
BrandInfineon
SGD5.315
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N 343 A 40 V 2 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 2.5V 1V 375 W Single 1
RS Stock No. 124-9024
Mfr. Part No.IRLB3034PBF
BrandInfineon
SGD3.57
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N 343 A 40 V 2 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 2.5V 1V 375 W Single 1
RS Stock No. 415-354
Mfr. Part No.2SK3878(F)
BrandToshiba
SGD5.11
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N 9 A 900 V 1.3 Ω TO-3PN Through Hole 3 -30 V, +30 V Enhancement 4V - 150 W Single 1
RS Stock No. 919-4713
Mfr. Part No.IRLML6401TRPBF
BrandInfineon
SGD0.161
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P 4.3 A 12 V 50 mΩ Micro Surface Mount 3 -8 V, +8 V Enhancement 0.95V 0.4V 1.3 W Single 1
RS Stock No. 301-316
Mfr. Part No.IRLML6401TRPBF
BrandInfineon
SGD0.57
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P 4.3 A 12 V 50 mΩ Micro Surface Mount 3 -8 V, +8 V Enhancement 0.95V 0.4V 1.3 W Single 1
RS Stock No. 124-1745
Mfr. Part No.BS170
SGD0.151
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N 500 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement 3V 0.8V 830 mW Single 1
RS Stock No. 671-4736
Mfr. Part No.BS170
SGD0.485
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N 500 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement 3V 0.8V 830 mW Single 1
RS Stock No. 739-6232
Mfr. Part No.FDMA3023PZ
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P 2.9 A 30 V 240 mΩ MLP Surface Mount 6 -8 V, +8 V Enhancement - 0.4V 1.4 W Isolated 2
RS Stock No. 166-1723
Mfr. Part No.FDMA3023PZ
SGD0.306
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P 2.9 A 30 V 240 mΩ MLP Surface Mount 6 -8 V, +8 V Enhancement - 0.4V 1.4 W Isolated 2
RS Stock No. 913-4045
Mfr. Part No.IRLB8743PBF
BrandInfineon
SGD1.795
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N 150 A 30 V 3 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 2.35V 1.35V 140 W Single 1
RS Stock No. 725-9325
Mfr. Part No.IRLB8743PBF
BrandInfineon
SGD2.122
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N 150 A 30 V 3 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 2.35V 1.35V 140 W Single 1
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