MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


...
Read more Read less

Filters

Viewing 1 - 20 of 440 products
Results per page
Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 415-354
Mfr. Part No.2SK3878(F)
BrandToshiba
SGD5.465
Each (In a Pack of 2)
units
N 9 A 900 V 1.3 Ω TO-3PN Through Hole 3 -30 V, +30 V Enhancement 4V - 150 W Single 1
RS Stock No. 601-2122
Mfr. Part No.2SK3700(F)
BrandToshiba
SGD4.47
Each
units
N 5 A 900 V 2.5 Ω TO-3PN Through Hole 3 -30 V, +30 V Enhancement 4V - 150 W Single 1
RS Stock No. 799-4996
Mfr. Part No.TK10A60D,S5Q(J
BrandToshiba
SGD2.612
Each (In a Pack of 5)
units
N 10 A 600 V 750 mΩ SC-67 Through Hole 3 -30 V, +30 V Enhancement 4V - 45 W Single 1
RS Stock No. 799-5056
Mfr. Part No.TK17A65W,S5X(M
BrandToshiba
SGD2.832
Each (In a Pack of 5)
units
N 17 A 650 V 200 mΩ TO-220SIS Through Hole 3 -30 V, +30 V Enhancement 3.5V - 45 W Single 1
RS Stock No. 168-7961
Mfr. Part No.TK17A65W,S5X(M
BrandToshiba
SGD4.157
Each (In a Tube of 50)
units
N 17 A 650 V 200 mΩ TO-220SIS Through Hole 3 -30 V, +30 V Enhancement 3.5V - 45 W Single 1
RS Stock No. 168-7993
Mfr. Part No.TK72A12N1,S4X(S
BrandToshiba
SGD3.007
Each (In a Tube of 50)
units
N 72 A 120 V 4.5 mΩ TO-220SIS Through Hole 3 -20 V, +20 V Enhancement 4V - 45 W Single 1
RS Stock No. 896-2432
Mfr. Part No.TK72A12N1,S4X(S
BrandToshiba
SGD2.82
Each (In a Pack of 5)
units
N 72 A 120 V 4.5 mΩ TO-220SIS Through Hole 3 -20 V, +20 V Enhancement 4V - 45 W Single 1
RS Stock No. 796-5119
Mfr. Part No.TPC8128
BrandToshiba
SGD0.874
Each (In a Pack of 5)
units
P 16 A 30 V 6.9 mΩ SOP Surface Mount 8 -25 V, +20 V Enhancement 2V - 1.9 W Single 1
RS Stock No. 896-2423
Mfr. Part No.TK6A60D,S5Q(J
BrandToshiba
SGD1.916
Each (In a Pack of 5)
units
N 6 A 600 V 1.25 Ω SC-67 Through Hole 3 -30 V, +30 V Enhancement 4V - 40 W Single 1
RS Stock No. 168-7783
Mfr. Part No.TPC8128
BrandToshiba
SGD0.73
Each (On a Reel of 3000)
units
P 16 A 30 V 6.9 mΩ SOP Surface Mount 8 -25 V, +20 V Enhancement 2V - 1.9 W Single 1
RS Stock No. 601-2116
Mfr. Part No.2SK3669(Q)
BrandToshiba
SGD1.502
Each (In a Pack of 5)
units
N 10 A 100 V 125 mΩ PW Mold Surface Mount 3 -20 V, +20 V Enhancement 5V - 20 W Single 1
RS Stock No. 799-5188
Mfr. Part No.TK6A60D,S5Q(J
BrandToshiba
SGD1.742
Each (In a Pack of 5)
units
N 6 A 600 V 1.25 Ω SC-67 Through Hole 3 -30 V, +30 V Enhancement 4V - 40 W Single 1
RS Stock No. 827-6268
Mfr. Part No.TK72A12N1,S4X(S
BrandToshiba
SGD3.688
Each (In a Pack of 4)
units
N 72 A 120 V 4.5 mΩ TO-220SIS Through Hole 3 -20 V, +20 V Enhancement 4V - 45 W Single 1
RS Stock No. 896-2357
Mfr. Part No.TK35N65W,S1F(S
BrandToshiba
SGD7.63
Each
units
N 35 A 650 V 80 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 3.5V - 270 W Single 1
RS Stock No. 601-3349
Mfr. Part No.SSM3K14T(F)
BrandToshiba
SGD0.50
Each (In a Pack of 10)
units
N 4 A 30 V 39 mΩ TSM Surface Mount 3 -20 V, +20 V Enhancement 2.5V - 700 mW Single 1
RS Stock No. 168-7976
Mfr. Part No.TK35N65W,S1F(S
BrandToshiba
SGD10.567
Each (In a Tube of 30)
units
N 35 A 650 V 80 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 3.5V - 270 W Single 1
RS Stock No. 827-6208
Mfr. Part No.TK35N65W,S1F(S
BrandToshiba
SGD10.31
Each
units
N 35 A 650 V 80 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 3.5V - 270 W Single 1
RS Stock No. 185-580
Mfr. Part No.2SK4017(Q)
BrandToshiba
SGD0.624
Each (In a Pack of 20)
units
N 5 A 60 V 100 mΩ PW Mold2 Through Hole 3 -20 V, +20 V Enhancement 2.5V - 20 W Single 1
RS Stock No. 756-0344
Mfr. Part No.2SK3132(Q)
BrandToshiba
SGD31.04
Each
units
N 50 A 500 V 95 mΩ TO-3PL Through Hole 3 -30 V, +30 V Enhancement 3.4V - 250 W Single 1
RS Stock No. 125-0530
Mfr. Part No.TK100E10N1,S1X(S
BrandToshiba
SGD3.68
Each (In a Pack of 2)
units
N 207 A 100 V 3.4 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement 4V 2V 255 W - 1