MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 178-0812
Mfr. Part No.IRF740PBF
BrandVishay
SGD1.712
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N 10 A 400 V 550 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS Stock No. 541-0020
Mfr. Part No.IRF740PBF
BrandVishay
SGD2.52
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N 10 A 400 V 550 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS Stock No. 787-9140
Mfr. Part No.IRFP460BPBF
BrandVishay
SGD6.96
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N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS Stock No. 159-6516
Mfr. Part No.IRFP460BPBF
BrandVishay
SGD4.614
Each (In a Tube of 25)
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N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS Stock No. 636-5397
Mfr. Part No.SUD23N06-31-GE3
BrandVishay
SGD1.428
Each (In a Pack of 5)
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N 23 A 60 V 31 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement - 1V 3 W Single 1
RS Stock No. 919-4400
Mfr. Part No.IRF840LCPBF
BrandVishay
SGD2.195
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N 8 A 500 V 850 mΩ TO-220AB Through Hole 3 -30 V, +30 V Enhancement - - 125 W Single 1
RS Stock No. 301-495
Mfr. Part No.IRF840LCPBF
BrandVishay
SGD2.44
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N 8 A 500 V 850 mΩ TO-220AB Through Hole 3 -30 V, +30 V Enhancement - 2V 125 W Single 1
RS Stock No. 165-2431
Mfr. Part No.SUD23N06-31-GE3
BrandVishay
SGD0.611
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N 23 A 60 V 31 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement - 1V 3 W Single 1
RS Stock No. 178-0830
Mfr. Part No.IRF644SPBF
BrandVishay
SGD3.46
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N 14 A 250 V 280 mΩ D2PAK (TO-263) Surface Mount 3 -20 V, +20 V Enhancement - 2V 3.1 W Single 1
RS Stock No. 818-1450
Mfr. Part No.SIA429DJT-T1-GE3
BrandVishay
SGD0.711
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P 8.5 A 20 V 60 mΩ PowerPAK SC-70 Surface Mount 6 -8 V, +8 V Enhancement - 0.4V 19 W Single 1
RS Stock No. 542-9311
Mfr. Part No.IRF644SPBF
BrandVishay
SGD4.15
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N 14 A 250 V 280 mΩ D2PAK (TO-263) Surface Mount 3 -20 V, +20 V Enhancement - 2V 3.1 W Single 1
RS Stock No. 165-6298
Mfr. Part No.SIA429DJT-T1-GE3
BrandVishay
SGD0.319
Each (On a Reel of 3000)
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P 8.5 A 20 V 60 mΩ PowerPAK SC-70 Surface Mount 6 -8 V, +8 V Enhancement - 0.4V 19 W Single 1
RS Stock No. 124-2249
Mfr. Part No.SUP70040E-GE3
BrandVishay
SGD4.536
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N 120 A 100 V 4.6 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2.5V 375 W Single 1
RS Stock No. 812-3233
Mfr. Part No.SI4599DY-T1-GE3
BrandVishay
SGD1.255
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N, P 4.7 A, 6.8 A 40 V 42.5 mΩ, 62 mΩ SOIC Surface Mount 8 -20 V, +20 V Enhancement - 1.2V 3 W, 3.1 W Isolated 2
RS Stock No. 165-7255
Mfr. Part No.SI4599DY-T1-GE3
BrandVishay
SGD0.585
Each (On a Reel of 2500)
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N, P 4.7 A, 6.8 A 40 V 42.5 mΩ, 62 mΩ SOIC Surface Mount 8 -20 V, +20 V Enhancement - 1.2V 3 W, 3.1 W Isolated 2
RS Stock No. 812-3126
Mfr. Part No.Si2338DS-T1-GE3
BrandVishay
SGD0.622
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N 6 A 30 V 33 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement - 1.2V 2.5 W Single 1
RS Stock No. 165-6909
Mfr. Part No.SI2338DS-T1-GE3
BrandVishay
SGD0.301
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N 6 A 30 V 33 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement - 1.2V 2.5 W Single 1
RS Stock No. 708-4793
Mfr. Part No.IRFP048PBF
BrandVishay
SGD5.722
Each (In a Pack of 5)
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N 70 A 60 V 18 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 190 W Single 1
RS Stock No. 178-0804
Mfr. Part No.IRFP048PBF
BrandVishay
SGD4.70
Each (In a Tube of 25)
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N 70 A 60 V 18 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 190 W Single 1
RS Stock No. 541-0862
Mfr. Part No.IRFP9240PBF
BrandVishay
SGD4.32
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P 12 A 200 V 500 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 150 W Single 1