Vishay TrenchFET Type P-Channel MOSFET, 18 A, 30 V, 8-Pin PowerPAK 1212-8 SIS413DN-T1-GE3
- RS Stock No.:
- 180-7936
- Mfr. Part No.:
- SIS413DN-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD14.22
(exc. GST)
SGD15.50
(inc. GST)
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Temporarily out of stock
- Shipping from 17 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD0.711 | SGD14.22 |
| 40 - 80 | SGD0.696 | SGD13.92 |
| 100 - 480 | SGD0.676 | SGD13.52 |
| 500 - 980 | SGD0.656 | SGD13.12 |
| 1000 + | SGD0.636 | SGD12.72 |
*price indicative
- RS Stock No.:
- 180-7936
- Mfr. Part No.:
- SIS413DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0094Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.61mm | |
| Height | 1.12mm | |
| Width | 3.61 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0094Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Operating Temperature 150°C | ||
Length 3.61mm | ||
Height 1.12mm | ||
Width 3.61 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is a P-channel, PowerPAK-1212-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 9.4mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 52W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Adaptor switches
• Load switches
• Mobile computing
• Power management
Related links
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- Vishay TrenchFET Gen III Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3
- Vishay Single TrenchFET Type P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8
- Vishay Single TrenchFET Type P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8 SIS407ADN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212