Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3
- RS Stock No.:
- 814-1323
- Mfr. Part No.:
- SISS27DN-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD19.12
(exc. GST)
SGD20.84
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Being discontinued
- Final 4,320 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD0.956 | SGD19.12 |
| 40 - 80 | SGD0.857 | SGD17.14 |
| 100 - 180 | SGD0.793 | SGD15.86 |
| 200 - 380 | SGD0.78 | SGD15.60 |
| 400 + | SGD0.772 | SGD15.44 |
*price indicative
- RS Stock No.:
- 814-1323
- Mfr. Part No.:
- SISS27DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Height | 0.78mm | |
| Width | 3.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Height 0.78mm | ||
Width 3.3 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
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