Vishay TrenchFET Gen III Type P-Channel MOSFET, 127.5 A, 20 V Enhancement, 8-Pin PowerPAK 1212
- RS Stock No.:
- 200-6849
- Mfr. Part No.:
- SiSS63DN-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD57.25
(exc. GST)
SGD62.40
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 18 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | SGD1.145 | SGD57.25 |
| 100 - 450 | SGD1.041 | SGD52.05 |
| 500 - 950 | SGD0.955 | SGD47.75 |
| 1000 - 1450 | SGD0.881 | SGD44.05 |
| 1500 + | SGD0.818 | SGD40.90 |
*price indicative
- RS Stock No.:
- 200-6849
- Mfr. Part No.:
- SiSS63DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 127.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET Gen III | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 65.8W | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 236nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.3 mm | |
| Height | 3.3mm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 127.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET Gen III | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 65.8W | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 236nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.3 mm | ||
Height 3.3mm | ||
Length 3.3mm | ||
Automotive Standard No | ||
The Vishay SiSS63DN-T1-GE3 is a P-channel 20V (D-S) MOSFET.
TrenchFET Gen III p-channel power MOSFET
Leadership RDS(on) in compact and thermally enhanced package
100 % Rg and UIS tested
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