Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3
- RS Stock No.:
- 814-1304
- Mfr. Part No.:
- SIS415DNT-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 20 units)*
SGD17.04
(exc. GST)
SGD18.58
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 2,880 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 280 | SGD0.852 | SGD17.04 |
| 300 - 580 | SGD0.701 | SGD14.02 |
| 600 - 1480 | SGD0.63 | SGD12.60 |
| 1500 - 2980 | SGD0.561 | SGD11.22 |
| 3000 + | SGD0.543 | SGD10.86 |
*price indicative
- RS Stock No.:
- 814-1304
- Mfr. Part No.:
- SIS415DNT-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK 1212-8 | |
| Series | TrenchFET Gen III | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0095Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 55.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Width | 3.4 mm | |
| Height | 0.8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK 1212-8 | ||
Series TrenchFET Gen III | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0095Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 55.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Width 3.4 mm | ||
Height 0.8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay TrenchFET Gen III Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212-8
- Vishay TrenchFET Gen III Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen III Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212 SiSS63DN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK 1212 SISS50DN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SiSS22LDN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8