P-Channel MOSFET, 27 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SISS23DN-T1-GE3

RS Stock No.:: 814-1314
Mfr. Part No.:: SISS23DN-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 27 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SISS23DN-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 20)

SGD0.916

(exc. GST)

SGD0.998

(inc. GST)

3000 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
20 - 40	SGD0.916	SGD18.32
60 - 80	SGD0.881	SGD17.62
100 +	SGD0.826	SGD16.52

**price indicative

RS Stock No.:: 814-1314
Mfr. Part No.:: SISS23DN-T1-GE3
Manufacturer:: Vishay

SiSS23DN, P-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	27 A
Maximum Drain Source Voltage	20 V
Series	TrenchFET
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	11.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	57 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Width	3.3mm
Typical Gate Charge @ Vgs	195 nC @ 10 V
Length	3.3mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Height	0.78mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 27 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SISS23DN-T1-GE3

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

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