Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual

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Subtotal (1 reel of 3000 units)*

SGD1,944.00

(exc. GST)

SGD2,118.00

(inc. GST)

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Last RS stock
  • Final 3,000 unit(s), ready to ship from another location
Units
Per unit
Per Reel*
3000 +SGD0.648SGD1,944.00

*price indicative

RS Stock No.:
228-2924
Mfr. Part No.:
SiS590DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

PowerPAK 1212-8 Dual

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.251Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

23.1W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.5nC

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Combo N- & P-Channel -100 V MOSFET.

100 % Rg and UIS tested

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