Infineon OptiMOS N channel-Channel Power MOSFET, 460 A, 60 V Enhancement, 12-Pin PG-TSON-12 IQFH68N06NM5ATMA1

N

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SGD7.82

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SGD8.52

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1 - 9SGD7.82
10 - 49SGD6.34
50 - 99SGD4.84
100 +SGD3.89

*price indicative

RS Stock No.:
762-984
Mfr. Part No.:
IQFH68N06NM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

460A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TSON-12

Series

OptiMOS

Mount Type

Surface

Pin Count

12

Maximum Drain Source Resistance Rds

0.68mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

168nC

Maximum Power Dissipation Pd

273W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

6mm

Height

1.1mm

Length

8mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 5Power-Transistor,60V optimized for low voltage drives, battery powered and synchronous rectification application. Fully qualified according to JEDEC for industrial applications.

100% avalanche tested

Superior thermal resistance

N-channel

Pb-free lead plating, RoHS compliant

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