Infineon OptiMOS-TM6 Type N-Channel MOSFET, 656 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH36N04NM6ATMA1
- RS Stock No.:
- 348-840
- Mfr. Part No.:
- IQFH36N04NM6ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
SGD12.32
(exc. GST)
SGD13.43
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 1 - 9 | SGD12.32 |
| 10 - 99 | SGD11.10 |
| 100 - 499 | SGD10.23 |
| 500 - 999 | SGD9.49 |
| 1000 + | SGD8.51 |
*price indicative
- RS Stock No.:
- 348-840
- Mfr. Part No.:
- IQFH36N04NM6ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 656A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS-TM6 | |
| Package Type | PG-TSON-12 | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.36mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 656A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS-TM6 | ||
Package Type PG-TSON-12 | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.36mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon 40 V normal level power MOSFET comes in our latest innovative, compact clip based PQFN 8x6 mm2 package enabling very high currents and power levels. The part offers current industry-best RDS(on) of 0.36 mΩ combined with outstanding thermal performance.
Minimized conduction losses
Fast switching
Reduced voltage overshoot
Related links
- Infineon IQF Type N-Channel Power Transistor 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 200 V Enhancement, 3-Pin PG-TO263-3 IPB068N20NM6ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 10-Pin PG-LHDSO-10-3 IAUCN04S6N007TATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N013TATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 10-Pin PG-LHDSO-10-2 IAUCN04S6N009TATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N017TATMA1
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6