Infineon OptiMOS N channel-Channel Power MOSFET, 339 A, 60 V Enhancement, 12-Pin PG-TSON-12 IQFH99N06NM5ATMA1

N
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SGD5.65

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SGD6.16

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Per unit
1 - 9SGD5.65
10 - 49SGD4.58
50 - 99SGD3.50
100 +SGD2.81

*price indicative

RS Stock No.:
762-986
Mfr. Part No.:
IQFH99N06NM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

339A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TSON-12

Series

OptiMOS

Mount Type

Surface

Pin Count

12

Maximum Drain Source Resistance Rds

0.99mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

214W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

115nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Width

6mm

Standards/Approvals

RoHS

Height

1.1mm

Length

8mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 5Power-Transistor,60V optimized for low voltage drives, battery powered and synchronous rectification application. Fully qualified according to JEDEC for industrial applications.

100% avalanche tested

Superior thermal resistance

N-channel

Pb-free lead plating, RoHS compliant

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