Infineon OptiMOS N-Channel Power MOSFET, 127 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE031N08LM6CGSCATMA1
- RS Stock No.:
- 762-895
- Mfr. Part No.:
- IQE031N08LM6CGSCATMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
SGD4.72
(exc. GST)
SGD5.14
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 1 - 9 | SGD4.72 |
| 10 - 24 | SGD3.97 |
| 25 - 99 | SGD2.46 |
| 100 - 499 | SGD2.41 |
| 500 + | SGD2.34 |
*price indicative
- RS Stock No.:
- 762-895
- Mfr. Part No.:
- IQE031N08LM6CGSCATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 127A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | PG-WHTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 3.15mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 3.4mm | |
| Height | 750μm | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 127A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type PG-WHTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 3.15mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Width 3.4mm | ||
Height 750μm | ||
Length 3.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor is optimized for high performance SMPS featuring rated voltage of 80 V. It is halogen‑free according to IEC61249‑2‑21 and is RoHS compliant.
N‑channel
100% avalanche tested
75°C operating temperature
Pb‑free lead plating
Related links
- Infineon OptiMOS N-Channel MOSFET 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1
- Infineon OptiMOS N-Channel MOSFET 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE046N08LM5CGSCATMA1
- Infineon OptiMOS N-Channel MOSFET 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1
- Infineon OptiMOS N-Channel Power MOSFET 80 V Enhancement, 9-Pin PG-TTFN-9 IQE031N08LM6CGATMA1
- Infineon OptiMOS 5 N-Channel MOSFET 30 V Enhancement, 9-Pin PG-WHTFN-9 IQDH35N03LM5CGSCATMA1
- Infineon OptiMOS 5 N-Channel MOSFET 60 V Enhancement, 9-Pin PG-WHTFN-9 IQDH88N06LM5CGSCATMA1
- Infineon IQD0 N-Channel MOSFET 100 V Enhancement, 9-Pin PG-WHTFN-9 IQD020N10NM5CGSCATMA1
- Infineon IQD0 N-Channel MOSFET 150 V Enhancement, 9-Pin PG-WHTFN-9 IQD063N15NM5CGSCATMA1