Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE046N08LM5CGSCATMA1
- RS Stock No.:
- 284-765
- Mfr. Part No.:
- IQE046N08LM5CGSCATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
SGD18.11
(exc. GST)
SGD19.74
(inc. GST)
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In Stock
- Plus 100 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD3.622 | SGD18.11 |
| 50 - 95 | SGD3.44 | SGD17.20 |
| 100 - 495 | SGD3.188 | SGD15.94 |
| 500 - 995 | SGD2.932 | SGD14.66 |
| 1000 + | SGD2.824 | SGD14.12 |
*price indicative
- RS Stock No.:
- 284-765
- Mfr. Part No.:
- IQE046N08LM5CGSCATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | PG-WHTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type PG-WHTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor delivers high efficiency and reliability tailored for demanding applications. With a focus on optimised performance in switch mode power supplies, this N channel MOSFET excels in synchronous rectification tasks. Engineered with Advanced thermal characteristics, it ensures superior heat dissipation alongside ultra low on resistance, enabling effective operation even under strict electrical demands. The component stands out for its extensive validation under JEDEC standards for industrial applications, ensuring peace of mind for professional users. Ideal for industrial power circuits, the transistor incorporates a robust avalanche rating, ensuring resilience during high stress scenarios, making it a smart choice for tomorrow's power management systems.
Optimised for high performance SMPS
Logic level control for low voltage systems
100% avalanche tested for reliability
Halogen free design for environmental responsibility
Pb free lead plating for modern standards
RoHS compliant for safe usage
Superior thermal resistance for durability
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