Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1
- RS Stock No.:
- 284-757
- Mfr. Part No.:
- IQE030N06NM5CGSCATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 reel of 6000 units)*
SGD15,276.00
(exc. GST)
SGD16,650.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 02 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 6000 + | SGD2.546 | SGD15,276.00 |
*price indicative
- RS Stock No.:
- 284-757
- Mfr. Part No.:
- IQE030N06NM5CGSCATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 132A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | PG-WHTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, RoHS, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 132A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type PG-WHTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon MOSFET is a power transistor exemplifies cutting edge technology and performance, designed for efficient operation in demanding applications. Optimised for synchronous rectification, it assures superior thermal management and reliability, making it an Ideal choice for various industrial uses. Built around the OptiMOS 5 platform, it is tailored to operate effectively within a 60V range while maintaining a Compact footprint. Its robust design facilitates efficient switching, ensuring high performance while minimising losses.
Superior thermal resistance for reliability
Pb free plating for environmental compliance
100% avalanche testing for performance assurance
Exceptional gate charge for switching efficiency
Complies with halogen free standards
Ideal for rigorous industrial applications
Related links
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE046N08LM5CGSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE031N08LM6CGSCATMA1
- Infineon IQD0 Type N-Channel MOSFET 100 V Enhancement, 9-Pin PG-WHTFN-9 IQD020N10NM5CGSCATMA1
- Infineon IQD0 Type N-Channel MOSFET 150 V Enhancement, 9-Pin PG-WHTFN-9 IQD063N15NM5CGSCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 9-Pin PG-WHTFN-9 IQE065N10NM5CGSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 9-Pin PG-TTFN-9 IQD020N10NM5CGATMA1