Infineon OptiMOS N channel-Channel Power MOSFET, 510 A, 60 V Enhancement, 12-Pin PG-TSON-12 IQFH61N06NM5ATMA1
- RS Stock No.:
- 762-983
- Mfr. Part No.:
- IQFH61N06NM5ATMA1
- Manufacturer:
- Infineon
N
Bulk discount available
View bulk pricing optionSubtotal (1 unit)*
SGD8.72
(exc. GST)
SGD9.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 3,000 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD8.72 |
| 10 - 49 | SGD7.05 |
| 50 - 99 | SGD5.41 |
| 100 + | SGD4.32 |
*price indicative
- RS Stock No.:
- 762-983
- Mfr. Part No.:
- IQFH61N06NM5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 510A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | PG-TSON-12 | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.61mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 190nC | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 8mm | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS | |
| Width | 6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 510A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type PG-TSON-12 | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.61mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 190nC | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 8mm | ||
Height 1.1mm | ||
Standards/Approvals RoHS | ||
Width 6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 5Power-Transistor,60V optimized for low voltage drives, battery powered and synchronous rectification application. Fully qualified according to JEDEC for industrial applications.
100% avalanche tested
Superior thermal resistance
N-channel
Pb-free lead plating, RoHS compliant
Related links
- Infineon OptiMOS N channel-Channel Power MOSFET 60 V Enhancement, 12-Pin PG-TSON-12 IQFH68N06NM5ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 60 V Enhancement, 12-Pin PG-TSON-12 IQFH86N06NM5ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 60 V Enhancement, 12-Pin PG-TSON-12 IQFH99N06NM5ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 12-Pin PG-TSON-12 IQFH36N04NM6ATMA1
- Infineon IQF Type N-Channel Power Transistor 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 80 V Enhancement, 9-Pin PG-TTFN-9 IQE031N08LM6CGATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE031N08LM6CGSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-HSOF-8-1 IAUTN06S5N008ATMA1