Infineon OptiMOS N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1
- RS Stock No.:
- 284-752
- Mfr. Part No.:
- IQE022N06LM5CGSCATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
SGD35.59
(exc. GST)
SGD38.795
(inc. GST)
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In Stock
- Plus 25 unit(s) shipping from 14 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD7.118 | SGD35.59 |
| 50 - 95 | SGD6.76 | SGD33.80 |
| 100 - 495 | SGD6.266 | SGD31.33 |
| 500 - 995 | SGD5.766 | SGD28.83 |
| 1000 + | SGD5.552 | SGD27.76 |
*price indicative
- RS Stock No.:
- 284-752
- Mfr. Part No.:
- IQE022N06LM5CGSCATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | PG-TSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type PG-TSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC | ||
Automotive Standard No | ||
The Infineon MOSFET is a power transistor is engineered for high performance in switch mode power supplies, ensuring reliability across demanding applications. Designed within the OptiMOS 5 series, it delivers exceptional efficiency and low on resistance, making it an Ideal choice for synchronous rectification. With its Pb free and RoHS compliant construction, the product not only meets the latest environmental standards but also assures robust performance under varying conditions. This transistor features Advanced thermal management and is avalanche rated, ensuring safer operation and durability in critical settings. Its logic level drive capability allows for seamless integration into a wide range of electronic systems, further exemplifying its versatility and performance stability.
Optimised for high efficiency power conversion
Low on resistance for enhanced performance
Pb free design for environmental compliance
Avalanche tested for increased reliability
Logic level drive simplifies low voltage interfacing
Thermal resistance for efficient heat management
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