Infineon IHW50N65R5XKSA1, Type N-Channel Reverse Conducting IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

SGD7.90

(exc. GST)

SGD8.62

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD3.95SGD7.90
10 - 98SGD3.625SGD7.25
100 - 248SGD3.345SGD6.69
250 - 498SGD3.105SGD6.21
500 +SGD3.015SGD6.03

*price indicative

Packaging Options:
RS Stock No.:
215-6646
Mfr. Part No.:
IHW50N65R5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

80A

Product Type

Reverse Conducting IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

282W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.35V

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-free lead plating, RoHS, JESD-022

Series

Resonant Switching

Automotive Standard

No

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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