Infineon IKW50N65EH5XKSA1, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 226-6118
- Mfr. Part No.:
- IKW50N65EH5XKSA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 2 units)*
SGD12.27
(exc. GST)
SGD13.374
(inc. GST)
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In Stock
- 208 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 4 | SGD6.135 | SGD12.27 |
| 6 - 8 | SGD5.91 | SGD11.82 |
| 10 + | SGD5.54 | SGD11.08 |
*price indicative
- RS Stock No.:
- 226-6118
- Mfr. Part No.:
- IKW50N65EH5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 275W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Width | 16.13 mm | |
| Series | High Speed Fifth Generation | |
| Length | 41.42mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 275W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Width 16.13 mm | ||
Series High Speed Fifth Generation | ||
Length 41.42mm | ||
Automotive Standard No | ||
The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
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