Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

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Subtotal (1 tube of 30 units)*

SGD110.01

(exc. GST)

SGD119.91

(inc. GST)

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Units
Per unit
Per Tube*
30 - 60SGD3.667SGD110.01
90 - 120SGD3.609SGD108.27
150 - 270SGD3.514SGD105.42
300 - 570SGD3.329SGD99.87
600 +SGD2.979SGD89.37

*price indicative

RS Stock No.:
215-6645
Mfr. Part No.:
IHW50N65R5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

282 W

Package Type

PG-TO247-3

Pin Count

3

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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