Infineon IGW50N65H5FKSA1, N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

This insulated-gate bipolar transistor is a high-voltage switching device designed for power conversion and control in demanding electronics. It is configured as an N-channel power transistor in a through-hole TO-247 package and serves applications requiring robust collector-emitter voltage handling and elevated current capacity. The component complies with common industry environmental and packaging norms, and its thermal endurance allows use across a wide ambient range.

• 650V collector-emitter capability for high-voltage switching applications
• 80A continuous collector current to handle substantial load currents
• 2.1V saturation voltage minimises conduction losses for efficiency
• 305W power dissipation supports high-power operation
• ±20V gate-emitter rating secures gate-drive flexibility
• 0.7mJ energy rating provides avalanche energy tolerance

• Suitable for motor-drive inverter stages in industrial equipment
• Used with high-voltage power supplies and converters
• Ideal for switch-mode power in traction electronics
• Can be used for industrial welding and induction heating control
• Suitable for power-factor correction and renewable-energy inverters

The device operates over a wide temperature span from -40°C up to 175°C, enabling use in harsh thermal environments.

It is supplied in a TO-247 through-hole package intended for heatsinking to manage the 305W maximum dissipation.

The component meets RoHS restrictions and adheres to JEDEC packaging norms.

It presents three pins for connection and is implemented as an N-type channel transistor.