Infineon IGW50N65H5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 110-7157
- Mfr. Part No.:
- IGW50N65H5FKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 4 units)**
SGD21.26
(exc. GST)
SGD23.17
(inc. GST)
Stock check temporarily unavailable - call for stock availability
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Pack** |
---|---|---|
4 - 8 | SGD5.315 | SGD21.26 |
12 - 16 | SGD5.118 | SGD20.472 |
20 + | SGD4.798 | SGD19.192 |
**price indicative
- RS Stock No.:
- 110-7157
- Mfr. Part No.:
- IGW50N65H5FKSA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Maximum Continuous Collector Current | 50 A | |
Maximum Collector Emitter Voltage | 650 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 305 W | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Dimensions | 16.13 x 5.21 x 21.1mm | |
Energy Rating | 0.7mJ | |
Gate Capacitance | 3000pF | |
Minimum Operating Temperature | -40 °C | |
Maximum Operating Temperature | +175 °C | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 305 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Energy Rating 0.7mJ | ||
Gate Capacitance 3000pF | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
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