Infineon IHW50N65R6XKSA1, Type N-Channel Reverse Conducting IGBT, 83 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

SGD9.37

(exc. GST)

SGD10.214

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD4.685SGD9.37
10 - 98SGD4.415SGD8.83
100 - 248SGD4.07SGD8.14
250 - 498SGD3.775SGD7.55
500 +SGD3.61SGD7.22

*price indicative

Packaging Options:
RS Stock No.:
225-0576
Mfr. Part No.:
IHW50N65R6XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Reverse Conducting IGBT

Maximum Continuous Collector Current Ic

83A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

251W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Series

TrenchStop

Automotive Standard

No

The Infineon IHW50N65R6 is the 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.

Frequency range 20-75 kHz

Low EMI

Very tight parameter distribution

Maximum operating TJ of 175 °C

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