Infineon IHW50N65R6XKSA1 IGBT, 83 A 650 V, 3-Pin PG-TO247-3

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Subtotal (1 pack of 2 units)*

SGD9.37

(exc. GST)

SGD10.214

(inc. GST)

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  • 136 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8SGD4.685SGD9.37
10 - 98SGD4.415SGD8.83
100 - 248SGD4.07SGD8.14
250 - 498SGD3.775SGD7.55
500 +SGD3.61SGD7.22

*price indicative

Packaging Options:
RS Stock No.:
225-0576
Mfr. Part No.:
IHW50N65R6XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

83 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

251 W

Package Type

PG-TO247-3

Pin Count

3

The Infineon IHW50N65R6 is the 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.

Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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