Infineon, Type N-Channel Reverse Conducting IGBT, 65 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 240 units)*

SGD531.36

(exc. GST)

SGD579.12

(inc. GST)

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Units
Per unit
Per Tube*
240 - 480SGD2.214SGD531.36
720 - 960SGD2.179SGD522.96
1200 - 2160SGD2.121SGD509.04
2400 - 4560SGD2.01SGD482.40
4800 +SGD1.798SGD431.52

*price indicative

RS Stock No.:
225-0571
Mfr. Part No.:
IHW30N65R6XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

65A

Product Type

Reverse Conducting IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

160W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Operating Temperature

175°C

Length

41.9mm

Width

16.3 mm

Series

IHW30N65R6

Height

5.3mm

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.

High ruggedness and stable temperature behaviour

Low EMI

Pb-free lead plating, RoHS compliant

Powerful monolithic reverse-conducting diode with low forward voltage

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