Infineon IHW30N65R6XKSA1, Type N-Channel Reverse Conducting IGBT, 65 A 650 V, 3-Pin TO-247, Through Hole

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

SGD23.56

(exc. GST)

SGD25.68

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
Per Pack*
5 - 5SGD4.712SGD23.56
10 - 95SGD4.32SGD21.60
100 - 245SGD3.982SGD19.91
250 - 495SGD3.70SGD18.50
500 +SGD3.602SGD18.01

*price indicative

Packaging Options:
RS Stock No.:
225-0572
Mfr. Part No.:
IHW30N65R6XKSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

Reverse Conducting IGBT

Maximum Continuous Collector Current Ic

65A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

160W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Series

IHW30N65R6

Height

5.3mm

Length

41.9mm

Width

16.3 mm

Automotive Standard

No

The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.

High ruggedness and stable temperature behaviour

Low EMI

Pb-free lead plating, RoHS compliant

Powerful monolithic reverse-conducting diode with low forward voltage

Related links