Infineon IHW30N65R6XKSA1, Type N-Channel Reverse Conducting IGBT, 65 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 5 units)*

SGD23.56

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SGD25.68

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5SGD4.712SGD23.56
10 - 95SGD4.32SGD21.60
100 - 245SGD3.982SGD19.91
250 - 495SGD3.70SGD18.50
500 +SGD3.602SGD18.01

*price indicative

Packaging Options:
RS Stock No.:
225-0572
Mfr. Part No.:
IHW30N65R6XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Reverse Conducting IGBT

Maximum Continuous Collector Current Ic

65A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

160W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Series

IHW30N65R6

Height

5.3mm

Length

41.9mm

Width

16.3 mm

Automotive Standard

No

The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.

High ruggedness and stable temperature behaviour

Low EMI

Pb-free lead plating, RoHS compliant

Powerful monolithic reverse-conducting diode with low forward voltage

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