Infineon, Type N-Channel IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6633
- Mfr. Part No.:
- IGW30N65L5XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 tube of 30 units)*
SGD86.07
(exc. GST)
SGD93.81
(inc. GST)
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In Stock
- Plus 180 unit(s) shipping from 16 March 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | SGD2.869 | SGD86.07 |
| 90 - 120 | SGD2.783 | SGD83.49 |
| 150 - 270 | SGD2.70 | SGD81.00 |
| 300 - 570 | SGD2.619 | SGD78.57 |
| 600 + | SGD2.54 | SGD76.20 |
*price indicative
- RS Stock No.:
- 215-6633
- Mfr. Part No.:
- IGW30N65L5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 85A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 227W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-free lead plating, RoHS, JEDEC | |
| Series | LowVCE(sat) Fifth Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 85A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 227W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-free lead plating, RoHS, JEDEC | ||
Series LowVCE(sat) Fifth Generation | ||
Automotive Standard No | ||
The Infineon fifth generation insulated-gate bipolar transistor with low saturation voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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