Infineon IGW30N65L5XKSA1, Type N-Channel IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 5 units)*

SGD33.22

(exc. GST)

SGD36.21

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5SGD6.644SGD33.22
10 - 95SGD6.094SGD30.47
100 - 245SGD5.626SGD28.13
250 - 495SGD5.222SGD26.11
500 +SGD5.078SGD25.39

*price indicative

Packaging Options:
RS Stock No.:
215-6634
Mfr. Part No.:
IGW30N65L5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

85A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

227W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.5V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-free lead plating, RoHS, JEDEC

Series

LowVCE(sat) Fifth Generation

Automotive Standard

No

The Infineon fifth generation insulated-gate bipolar transistor with low saturation voltage.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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