Infineon, Type N-Channel IGBT, 85 A 650 V, 4-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6676
- Mfr. Part No.:
- IKZ50N65EH5XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
SGD134.25
(exc. GST)
SGD146.34
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 210 unit(s) shipping from 10 March 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | SGD4.475 | SGD134.25 |
| 90 - 120 | SGD4.34 | SGD130.20 |
| 150 - 270 | SGD4.167 | SGD125.01 |
| 300 - 570 | SGD3.958 | SGD118.74 |
| 600 + | SGD3.721 | SGD111.63 |
*price indicative
- RS Stock No.:
- 215-6676
- Mfr. Part No.:
- IKZ50N65EH5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 85A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 273W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 85A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 273W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
The Infineon 650v duopack insulated-gate bipolar transistor and diode copacked with rapid 1 fast and soft antiparallel diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
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