Infineon IKW30N65EL5XKSA1, Type N-Channel IGBT Single Transistor IC, 85 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 226-6113
- Mfr. Part No.:
- IKW30N65EL5XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD12.21
(exc. GST)
SGD13.308
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 580 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 4 | SGD6.105 | SGD12.21 |
| 6 - 8 | SGD5.875 | SGD11.75 |
| 10 + | SGD5.51 | SGD11.02 |
*price indicative
- RS Stock No.:
- 226-6113
- Mfr. Part No.:
- IKW30N65EL5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 85A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 227W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Height | 5.3mm | |
| Series | LowVCE(sat) Fifth Generation | |
| Width | 16.3 mm | |
| Length | 41.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 85A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 227W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Height 5.3mm | ||
Series LowVCE(sat) Fifth Generation | ||
Width 16.3 mm | ||
Length 41.9mm | ||
Automotive Standard No | ||
The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz. It has longer lifetime and higher reliability of IGBT.
Low gate charge QG
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
Related links
- Infineon 85 A 650 V Through Hole
- Infineon IKB40N65ES5ATMA1 79 A 650 V Surface
- Infineon IHW30N65R5XKSA1 60 A 650 V Through Hole
- Infineon IKA10N65ET6XKSA2 25 A 650 V Through Hole
- Infineon 60 A 650 V Through Hole
- Infineon 74 A 650 V Surface
- Infineon AIKW50N65RF5XKSA1 80 A 650 V Through Hole
- Infineon 25 A 650 V Through Hole