Infineon AIKW50N65RF5XKSA1, Type N-Channel IGBT Single Transistor IC, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 228-6510
- Mfr. Part No.:
- AIKW50N65RF5XKSA1
- Manufacturer:
- Infineon
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SGD9.32
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SGD10.16
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Units | Per unit |
|---|---|
| 1 - 9 | SGD9.32 |
| 10 - 99 | SGD8.55 |
| 100 - 249 | SGD7.89 |
| 250 - 499 | SGD7.33 |
| 500 + | SGD7.12 |
*price indicative
- RS Stock No.:
- 228-6510
- Mfr. Part No.:
- AIKW50N65RF5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±2 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Length | 41.9mm | |
| Series | TrenchStop | |
| Standards/Approvals | AEC-Q101/100 | |
| Width | 16.3 mm | |
| Automotive Standard | AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±2 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Length 41.9mm | ||
Series TrenchStop | ||
Standards/Approvals AEC-Q101/100 | ||
Width 16.3 mm | ||
Automotive Standard AEC-Q100, AEC-Q101 | ||
The Infineon AIKW50N65RF5 is hybrid power discrete with SiC power technology with best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. The hybrid of 650V TRENCHSTOP 5 AUTO fast switching IGBT and CoolSiC Schottky diode to enable a cost efficient performance boost for fast switching automotive applications such as on board charger, PFC, DC-DC and DC-AC.
Trenchstop 5 fast switching IGBT
Best in class efficiency in hard switching and resonant topologies
Low gate charge QG
Maximum junction temperature 175°C
Related links
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