Infineon, Type N-Channel IGBT Single Transistor IC, 80 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 226-6119
- Mfr. Part No.:
- IKY40N120CS6XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
SGD149.64
(exc. GST)
SGD163.11
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 210 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | SGD4.988 | SGD149.64 |
| 90 - 120 | SGD4.801 | SGD144.03 |
| 150 + | SGD4.50 | SGD135.00 |
*price indicative
- RS Stock No.:
- 226-6119
- Mfr. Part No.:
- IKY40N120CS6XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 5kW | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Operating Temperature | 175°C | |
| Length | 41.2mm | |
| Standards/Approvals | RoHS | |
| Height | 5.1mm | |
| Width | 15.9 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 5kW | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Operating Temperature 175°C | ||
Length 41.2mm | ||
Standards/Approvals RoHS | ||
Height 5.1mm | ||
Width 15.9 mm | ||
Automotive Standard No | ||
The Infineon 40 A IGBT with anti-parallel diode is very soft, fast recovery anti-parallel diode and has high ruggedness, temperature stable behaviour. It used low gate charge.
Low EMI
Low Gate Charge QG
Low saturation voltage if 1.85 V combined with low switching losses