Infineon IHW30N120R5XKSA1, Type N-Channel IGBT Single Transistor IC, 60 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 226-6078
- Mfr. Part No.:
- IHW30N120R5XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD26.17
(exc. GST)
SGD28.525
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 25 unit(s) shipping from 16 March 2026
- Plus 1,785 unit(s) shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | SGD5.234 | SGD26.17 |
| 15 - 20 | SGD5.036 | SGD25.18 |
| 25 + | SGD4.724 | SGD23.62 |
*price indicative
- RS Stock No.:
- 226-6078
- Mfr. Part No.:
- IHW30N120R5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 60A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 330W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | Resonant Switching | |
| Length | 42mm | |
| Standards/Approvals | RoHS | |
| Width | 16.13 mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 60A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 330W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series Resonant Switching | ||
Length 42mm | ||
Standards/Approvals RoHS | ||
Width 16.13 mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon IHW30N120R5 power full monolithic body diode with low forward voltage designed for soft commutation only and has high ruggedness, temperature stable behaviour with low VCEsat.
Very tight parameter distribution
Low EMI
Related links
- Infineon 60 A 1200 V Through Hole
- Infineon IHW30N65R5XKSA1 60 A 650 V Through Hole
- Infineon AIKW30N60CTXKSA1 60 A 600 V Through Hole
- Infineon 60 A 650 V Through Hole
- Infineon 60 A 600 V Through Hole
- Infineon IKY40N120CS6XKSA1 80 A 1200 V Through Hole
- Infineon IHW15N120E1XKSA1 30 A 1200 V Through Hole
- Infineon IKQ75N120CS6XKSA1 150 A 1200 V Through Hole
