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Infineon IHW20N135R5XKSA1 IGBT, 40 A 1350 V, 3-Pin PG-TO247-3

RS Stock No.:: 215-6635
Mfr. Part No.:: IHW20N135R5XKSA1
Manufacturer:: Infineon

Infineon IHW20N135R5XKSA1 IGBT, 40 A 1350 V, 3-Pin PG-TO247-3

Bulk discount available

Subtotal (1 tube of 30 units)*

SGD78.96

(exc. GST)

SGD86.07

(inc. GST)

Add 60 units to get free delivery

Orders below SGD150.00 (exc. GST) cost SGD25.00.

In Stock

210 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
30 - 60	SGD2.632	SGD78.96
90 - 120	SGD2.59	SGD77.70
150 - 270	SGD2.522	SGD75.66
300 - 570	SGD2.389	SGD71.67
600 +	SGD2.138	SGD64.14

*price indicative

RS Stock No.:: 215-6635
Mfr. Part No.:: IHW20N135R5XKSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	40 A
	Maximum Collector Emitter Voltage	1350 V
	Maximum Gate Emitter Voltage	±20 V, ±25 V
	Maximum Power Dissipation	310 W
	Package Type	PG-TO247-3
	Pin Count	3

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 40 A
	Maximum Collector Emitter Voltage 1350 V
	Maximum Gate Emitter Voltage ±20 V, ±25 V
	Maximum Power Dissipation 310 W
	Package Type PG-TO247-3
	Pin Count 3

Datasheet-IHW20N135R5XKSA1

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode offers high breakdown voltage of 1350v.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

Infineon IHW20N135R5XKSA1 IGBT, 40 A 1350 V, 3-Pin PG-TO247-3

Add 60 units to get free delivery

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