Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

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Subtotal (1 pack of 2 units)*

SGD12.39

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SGD13.506

(inc. GST)

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Per unit
Per Pack*
2 - 8SGD6.195SGD12.39
10 - 98SGD5.685SGD11.37
100 - 248SGD5.25SGD10.50
250 - 498SGD4.87SGD9.74
500 +SGD4.74SGD9.48

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Packaging Options:
RS Stock No.:
215-6655
Mfr. Part No.:
IKB40N65ES5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

79 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

230 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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