Infineon, Type N-Channel IGBT Single Transistor IC, 79 A 650 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 215-6654
- Mfr. Part No.:
- IKB40N65ES5ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 1000 units)*
SGD2,668.00
(exc. GST)
SGD2,908.00
(inc. GST)
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In Stock
- 4,000 unit(s) ready to ship from another location
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | SGD2.668 | SGD2,668.00 |
| 2000 - 2000 | SGD2.561 | SGD2,561.00 |
| 3000 + | SGD2.494 | SGD2,494.00 |
*price indicative
- RS Stock No.:
- 215-6654
- Mfr. Part No.:
- IKB40N65ES5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 79A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 230W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 79A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 230W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference