Infineon, Type N-Channel IGBT Single Transistor IC, 30 A 650 V, 3-Pin TO-263, Surface

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 reel of 1000 units)*

SGD1,707.00

(exc. GST)

SGD1,861.00

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 27 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 - 1000SGD1.707SGD1,707.00
2000 - 2000SGD1.639SGD1,639.00
3000 +SGD1.596SGD1,596.00

*price indicative

RS Stock No.:
215-6647
Mfr. Part No.:
IKB15N65EH5ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current Ic

30A

Product Type

IGBT Single Transistor IC

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

105W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Series

High Speed Fifth Generation

Automotive Standard

No

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

Related links