Infineon IKB15N65EH5ATMA1, Type N-Channel IGBT Single Transistor IC, 30 A 650 V, 3-Pin TO-263, Surface

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Subtotal (1 pack of 5 units)*

SGD23.18

(exc. GST)

SGD25.265

(inc. GST)

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Per unit
Per Pack*
5 - 5SGD4.636SGD23.18
10 - 95SGD4.256SGD21.28
100 - 245SGD3.924SGD19.62
250 - 495SGD3.644SGD18.22
500 +SGD3.542SGD17.71

*price indicative

Packaging Options:
RS Stock No.:
215-6648
Mfr. Part No.:
IKB15N65EH5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

30A

Product Type

IGBT Single Transistor IC

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

105W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Series

High Speed Fifth Generation

Automotive Standard

No

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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