Infineon IKB40N65EF5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO263-3
- RS Stock No.:
- 215-6651
- Mfr. Part No.:
- IKB40N65EF5ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD13.07
(exc. GST)
SGD14.246
(inc. GST)
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In Stock
- 976 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD6.535 | SGD13.07 |
| 10 - 98 | SGD5.995 | SGD11.99 |
| 100 - 248 | SGD5.54 | SGD11.08 |
| 250 - 498 | SGD5.13 | SGD10.26 |
| 500 + | SGD4.995 | SGD9.99 |
*price indicative
- RS Stock No.:
- 215-6651
- Mfr. Part No.:
- IKB40N65EF5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 74 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 250 W | |
| Package Type | PG-TO263-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 74 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 250 W | ||
Package Type PG-TO263-3 | ||
Pin Count 3 | ||
The Infineon high speed fast switching insulated-gate bipolar transistor with full current rated rapid 1 fast and soft antiparallel diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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