STMicroelectronics STGW40H65FB, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 792-5805
- Mfr. Part No.:
- STGW40H65FB
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD9.60
(exc. GST)
SGD10.46
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | SGD4.80 | SGD9.60 |
| 20 - 38 | SGD4.705 | SGD9.41 |
| 40 - 98 | SGD4.605 | SGD9.21 |
| 100 - 498 | SGD4.51 | SGD9.02 |
| 500 + | SGD4.41 | SGD8.82 |
*price indicative
- RS Stock No.:
- 792-5805
- Mfr. Part No.:
- STGW40H65FB
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 283W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.15 mm | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Standards/Approvals | RoHS | |
| Series | H | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 283W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5.15 mm | ||
Height 20.15mm | ||
Length 15.75mm | ||
Standards/Approvals RoHS | ||
Series H | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- STMicroelectronics STGW40H65FB IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics STGW60H65DFB IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics STGW40H65DFB IGBT 3-Pin TO-247, Through Hole
- onsemi NGTB40N65FL2WG IGBT 3-Pin TO-247, Through Hole
- Infineon IKW50N65ES5XKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW75N65ES5XKSA1 IGBT 3-Pin TO-247, Through Hole
- onsemi AFGHL40T65SPD IGBT 3-Pin TO-247, Through Hole
- onsemi AFGHL50T65SQD IGBT 3-Pin TO-247