MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 708-2484
Mfr. Part No.BSS84DW-7-F
SGD0.502
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P 130 mA 50 V 10 Ω SOT-363 (SC-88) Surface Mount 6 -20 V, +20 V Enhancement 2V - 300 mW Isolated 2
RS Stock No. 122-0599
Mfr. Part No.BSS84DW-7-F
SGD0.169
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P 130 mA 50 V 10 Ω SOT-363 (SC-88) Surface Mount 6 -20 V, +20 V Enhancement 2V - 300 mW Isolated 2
RS Stock No. 751-4092
Mfr. Part No.DMG3420U-7
SGD0.402
Each (In a Pack of 50)
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N 5.5 A 20 V 91 mΩ SOT-23 Surface Mount 3 -12 V, +12 V Enhancement 1.2V - 740 mW Single 1
RS Stock No. 215-6688
Mfr. Part No.BS250P
SGD1.348
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P 230 mA 45 V 14 Ω E-Line Through Hole 3 -20 V, +20 V Enhancement 3.5V - 700 mW Single 1
RS Stock No. 121-9542
Mfr. Part No.DMG3420U-7
SGD0.104
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N 5.47 A 20 V 91 mΩ SOT-23 Surface Mount 3 -12 V, +12 V Enhancement 1.2V - 740 mW Single 1
RS Stock No. 922-7831
Mfr. Part No.BS250P
SGD0.528
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P 230 mA 45 V 14 Ω E-Line Through Hole 3 -20 V, +20 V Enhancement 3.5V - 700 mW Single 1
RS Stock No. 121-9531
Mfr. Part No.BSS123W-7-F
SGD0.115
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N 170 mA 100 V 10 Ω SOT-323 (SC-70) Surface Mount 3 -20 V, +20 V Enhancement 2V - 200 mW Single 1
RS Stock No. 121-9615
Mfr. Part No.ZVP2106ASTZ
SGD0.557
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P 280 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement 3.5V - 700 mW Single 1
RS Stock No. 655-543
Mfr. Part No.ZVN3306A
SGD1.134
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N 270 mA 60 V 5 Ω E-Line Through Hole 3 -20 V, +20 V Enhancement 2.4V - 625 mW Single 1
RS Stock No. 751-3660
Mfr. Part No.BSS123W-7-F
SGD0.196
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N 170 mA 100 V 10 Ω SOT-323 (SC-70) Surface Mount 3 -20 V, +20 V Enhancement 2V - 200 mW Single 1
RS Stock No. 823-1842
Mfr. Part No.ZVP2106ASTZ
SGD1.112
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P 280 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement 3.5V - 700 mW Single 1
RS Stock No. 922-7752
Mfr. Part No.ZVN3306A
SGD0.47
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N 270 mA 60 V 5 Ω E-Line Through Hole 3 -20 V, +20 V Enhancement 2.4V - 625 mW Single 1
RS Stock No. 738-4932
Mfr. Part No.BSS84-7-F
SGD0.118
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P 130 mA 50 V 10 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2V - 300 mW Single 1
RS Stock No. 169-7461
Mfr. Part No.DMC3025LSD-13
SGD0.228
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N, P 2.3 A, 8.5 A 30 V 32 mΩ, 85 mΩ SOIC Surface Mount 8 -20 V, +20 V Enhancement 2V - 1.5 W Isolated 2
RS Stock No. 922-8131
Mfr. Part No.BSS84-7-F
SGD0.039
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P 130 mA 50 V 10 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2V - 300 mW Single 1
RS Stock No. 823-3198
Mfr. Part No.DMC3025LSD-13
SGD0.546
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N, P 2.3 A, 8.5 A 30 V 32 mΩ, 85 mΩ SOIC Surface Mount 8 -20 V, +20 V Enhancement 2V - 1.5 W Isolated 2
RS Stock No. 751-4256
Mfr. Part No.DMP2305U-7
SGD0.20
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P 4.2 A 20 V 113 mΩ SOT-23 Surface Mount 3 -8 V, +8 V Enhancement 0.9V - 1.4 W Single 1
RS Stock No. 121-9547
Mfr. Part No.DMP2305U-7
SGD0.095
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P 4.2 A 20 V 113 mΩ SOT-23 Surface Mount 3 -8 V, +8 V Enhancement 0.9V - 1.4 W Single 1
RS Stock No. 121-9931
Mfr. Part No.ZVP3310FTA
SGD0.431
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P 75 mA 100 V 20 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 3.5V - 330 mW Single 1
RS Stock No. 121-9622
Mfr. Part No.DMN65D8L-7
SGD0.04
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N 310 mA 60 V 4 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2V - 540 mW Single 1