Vishay IRFD Type N-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin HVMDIP IRFD110PBF

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Subtotal (1 unit)*

SGD1.11

(exc. GST)

SGD1.21

(inc. GST)

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Units
Per unit
1 - 9SGD1.11
10 - 24SGD1.08
25 - 49SGD1.05
50 - 99SGD1.02
100 +SGD0.99

*price indicative

Packaging Options:
RS Stock No.:
541-1039
Mfr. Part No.:
IRFD110PBF
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

100V

Package Type

HVMDIP

Series

IRFD

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

540mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8.3nC

Forward Voltage Vf

2.5V

Maximum Power Dissipation Pd

1.3W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

6.29 mm

Standards/Approvals

No

Length

5mm

Height

3.37mm

Automotive Standard

No

FEATURES

• TrenchFET® power MOSFET

• Package with low thermal resistance

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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