N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP Vishay IRFD210PBF

RS Stock No.:: 541-0531
Mfr. Part No.:: IRFD210PBF
Manufacturer:: Vishay

N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP Vishay IRFD210PBF

This image is representative of the product range

Bulk discount available

Price Each

SGD1.31

(exc. GST)

SGD1.43

(inc. GST)

3 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
1 - 9	SGD1.31
10 - 49	SGD1.27
50 - 99	SGD1.23
100 - 249	SGD1.19
250 +	SGD1.15

RS Stock No.:: 541-0531
Mfr. Part No.:: IRFD210PBF
Manufacturer:: Vishay

IRFD210PBF Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	600 mA
Maximum Drain Source Voltage	200 V
Package Type	HVMDIP
Mounting Type	Through Hole
Pin Count	4
Maximum Drain Source Resistance	1.5 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	8.2 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	5mm
Width	6.29mm
Minimum Operating Temperature	-55 °C
Height	3.37mm

N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP Vishay IRFD210PBF

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

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