Vishay IRFD Type N-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin HVMDIP IRFD110PBF
- RS Stock No.:
- 919-4498
- Mfr. Part No.:
- IRFD110PBF
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 tube of 100 units)*
SGD114.00
(exc. GST)
SGD124.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 100 - 100 | SGD1.14 | SGD114.00 |
| 200 - 300 | SGD1.125 | SGD112.50 |
| 400 - 700 | SGD1.095 | SGD109.50 |
| 800 - 1500 | SGD1.036 | SGD103.60 |
| 1600 + | SGD0.926 | SGD92.60 |
*price indicative
- RS Stock No.:
- 919-4498
- Mfr. Part No.:
- IRFD110PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRFD | |
| Package Type | HVMDIP | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 540mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 2.5V | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.29 mm | |
| Standards/Approvals | No | |
| Height | 3.37mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRFD | ||
Package Type HVMDIP | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 540mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 2.5V | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Operating Temperature 175°C | ||
Width 6.29 mm | ||
Standards/Approvals No | ||
Height 3.37mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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