Quad N/P-Channel-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM Diodes Inc ZXMHC3A01T8TA

RS Stock No.:: 823-1877
Mfr. Part No.:: ZXMHC3A01T8TA
Manufacturer:: DiodesZetex

Quad N/P-Channel-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM Diodes Inc ZXMHC3A01T8TA

Bulk discount available

Price Each (In a Pack of 5)

SGD2.156

(exc. GST)

SGD2.35

(inc. GST)

920 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
5 - 20	SGD2.156	SGD10.78
25 - 95	SGD2.11	SGD10.55
100 - 245	SGD2.048	SGD10.24
250 - 495	SGD1.986	SGD9.93
500 +	SGD1.928	SGD9.64

**price indicative

RS Stock No.:: 823-1877
Mfr. Part No.:: ZXMHC3A01T8TA
Manufacturer:: DiodesZetex

Complementary 30v Enhancement Mode Mosfet H-Bridge Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.8 A, 3.1 A
Maximum Drain Source Voltage	30 V
Package Type	SM
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	180 mΩ, 330 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.7 W
Transistor Configuration	Full Bridge
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	3.9 nC @ 10 V, 5.2 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	4
Length	6.7mm
Width	3.7mm
Transistor Material	Si
Height	1.6mm
Minimum Operating Temperature	-55 °C

Quad N/P-Channel-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM Diodes Inc ZXMHC3A01T8TA

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

Related links