Diodes Inc Quad N/P-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM ZXMHC3A01T8TA
- RS Stock No.:
- 823-1877
- Mfr. Part No.:
- ZXMHC3A01T8TA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD14.35
(exc. GST)
SGD15.65
(inc. GST)
FREE delivery for orders over $150.00
In Stock
- 915 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
5 - 20 | SGD2.87 | SGD14.35 |
25 - 95 | SGD2.81 | SGD14.05 |
100 - 245 | SGD2.728 | SGD13.64 |
250 - 495 | SGD2.646 | SGD13.23 |
500 + | SGD2.57 | SGD12.85 |
*price indicative
- RS Stock No.:
- 823-1877
- Mfr. Part No.:
- ZXMHC3A01T8TA
- Manufacturer:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 1.8 A, 3.1 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SM | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 180 mΩ, 330 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 1.7 W | |
Transistor Configuration | Full Bridge | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 4 | |
Transistor Material | Si | |
Width | 3.7mm | |
Length | 6.7mm | |
Typical Gate Charge @ Vgs | 3.9 nC @ 10 V, 5.2 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Height | 1.6mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 1.8 A, 3.1 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SM | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 180 mΩ, 330 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 1.7 W | ||
Transistor Configuration Full Bridge | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 4 | ||
Transistor Material Si | ||
Width 3.7mm | ||
Length 6.7mm | ||
Typical Gate Charge @ Vgs 3.9 nC @ 10 V, 5.2 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
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