DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 4.98 A, 30 V Enhancement, 8-Pin SOIC ZXMHC3F381N8TC
- RS Stock No.:
- 751-5344
- Mfr. Part No.:
- ZXMHC3F381N8TC
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD8.92
(exc. GST)
SGD9.725
(inc. GST)
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In Stock
- Plus 5 unit(s) shipping from 29 December 2025
- Plus 24,440 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD1.784 | SGD8.92 |
| 25 - 95 | SGD1.748 | SGD8.74 |
| 100 - 245 | SGD1.694 | SGD8.47 |
| 250 - 495 | SGD1.64 | SGD8.20 |
| 500 + | SGD1.586 | SGD7.93 |
*price indicative
- RS Stock No.:
- 751-5344
- Mfr. Part No.:
- ZXMHC3F381N8TC
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 4.98A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.35W | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 0.82V | |
| Transistor Configuration | Full Bridge | |
| Maximum Operating Temperature | -55°C | |
| Width | 4 mm | |
| Standards/Approvals | RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020 | |
| Height | 1.5mm | |
| Length | 5mm | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 4.98A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.35W | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 0.82V | ||
Transistor Configuration Full Bridge | ||
Maximum Operating Temperature -55°C | ||
Width 4 mm | ||
Standards/Approvals RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020 | ||
Height 1.5mm | ||
Length 5mm | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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