DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC
- RS Stock No.:
- 751-5348
- Mfr. Part No.:
- ZXMHC6A07N8TC
- Manufacturer:
- DiodesZetex
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
SGD8.65
(exc. GST)
SGD9.45
(inc. GST)
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In Stock
- Plus 7,395 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD1.73 | SGD8.65 |
| 50 - 95 | SGD1.718 | SGD8.59 |
| 100 - 295 | SGD1.694 | SGD8.47 |
| 300 - 895 | SGD1.616 | SGD8.08 |
| 900 + | SGD1.398 | SGD6.99 |
*price indicative
- RS Stock No.:
- 751-5348
- Mfr. Part No.:
- ZXMHC6A07N8TC
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N, Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.2nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.36W | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Full Bridge | |
| Height | 1.5mm | |
| Standards/Approvals | UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202 | |
| Width | 4 mm | |
| Length | 5mm | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N, Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.2nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.36W | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Full Bridge | ||
Height 1.5mm | ||
Standards/Approvals UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202 | ||
Width 4 mm | ||
Length 5mm | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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