DiodesZetex Full Bridge 4 Type P, Type N-Channel MOSFET, 7.8 A, 30 V Enhancement, 8-Pin SOIC DMHC3025LSD-13
- RS Stock No.:
- 823-3211
- Mfr. Part No.:
- DMHC3025LSD-13
- Manufacturer:
- DiodesZetex
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View bulk pricing optionSubtotal (1 pack of 10 units)*
SGD10.93
(exc. GST)
SGD11.91
(inc. GST)
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In Stock
- 290 unit(s) ready to ship from another location
- Plus 24,040 unit(s) shipping from 08 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.093 | SGD10.93 |
| 20 - 40 | SGD1.07 | SGD10.70 |
| 50 - 90 | SGD1.039 | SGD10.39 |
| 100 - 190 | SGD1.009 | SGD10.09 |
| 200 + | SGD0.979 | SGD9.79 |
*price indicative
- RS Stock No.:
- 823-3211
- Mfr. Part No.:
- DMHC3025LSD-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 7.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Full Bridge | |
| Standards/Approvals | UL 94V-0, MIL-STD-202, RoHS, AEC-Q101, J-STD-020 | |
| Height | 1.5mm | |
| Length | 4.95mm | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 7.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Maximum Power Dissipation Pd 1.5W | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Full Bridge | ||
Standards/Approvals UL 94V-0, MIL-STD-202, RoHS, AEC-Q101, J-STD-020 | ||
Height 1.5mm | ||
Length 4.95mm | ||
Number of Elements per Chip 4 | ||
Automotive Standard AEC-Q101 | ||
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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