Quad N/P-Channel-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC Diodes Inc DMHC3025LSD-13

RS Stock No.:: 823-3211
Mfr. Part No.:: DMHC3025LSD-13
Manufacturer:: DiodesZetex

Quad N/P-Channel-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC Diodes Inc DMHC3025LSD-13

Bulk discount available

Price Each (In a Pack of 10)

SGD1.019

(exc. GST)

SGD1.111

(inc. GST)

320 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
10 - 10	SGD1.019	SGD10.19
20 - 40	SGD0.997	SGD9.97
50 - 90	SGD0.968	SGD9.68
100 - 190	SGD0.94	SGD9.40
200 +	SGD0.912	SGD9.12

**price indicative

RS Stock No.:: 823-3211
Mfr. Part No.:: DMHC3025LSD-13
Manufacturer:: DiodesZetex

30v Complementary Enhancement Mode Mosfet H-Bridge Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.5 A, 7.8 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	40 mΩ, 80 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Maximum Power Dissipation	1.5 W
Transistor Configuration	Full Bridge
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	4
Maximum Operating Temperature	+150 °C
Length	4.95mm
Typical Gate Charge @ Vgs	11.4 nC @ 10 V, 11.7 nC @ 10 V
Width	3.95mm
Transistor Material	Si
Height	1.5mm
Minimum Operating Temperature	-55 °C

Quad N/P-Channel-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC Diodes Inc DMHC3025LSD-13

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

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