JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 867-3287
Mfr. Part No.TF412ST5G
SGD0.243
Each (In a Pack of 50)
units
N 1.2 → 3mA 30 V - -30V Single Single - Surface Mount SOT-883 3 4pF 4pF 1.08 x 0.68 x 0.41mm
RS Stock No. 163-0319
Mfr. Part No.TF412ST5G
SGD0.136
Each (On a Reel of 8000)
units
N 1.2 → 3mA 30 V - -30V Single Single - Surface Mount SOT-883 3 4pF 4pF 1.08 x 0.68 x 0.41mm
RS Stock No. 864-7846
Mfr. Part No.MMBF4393LT1G
SGD0.367
Each (In a Pack of 50)
units
N 5 → 30mA 30 V +30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 14 pF @ 0 V 14 pF @ -15 V 3.04 x 1.4 x 1.01mm
RS Stock No. 145-4270
Mfr. Part No.MMBF4393LT1G
SGD0.136
Each (On a Reel of 3000)
units
N 5 → 30mA 30 V +30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 14 pF @ 0 V 14 pF @ -15 V 3.04 x 1.4 x 1.01mm
RS Stock No. 122-0136
Mfr. Part No.MMBFJ310LT3G
SGD0.169
Each (On a Reel of 10000)
units
N 24 → 60mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 761-4524
Mfr. Part No.MMBFJ113
SGD0.29
Each (In a Pack of 25)
units
N min. 2mA - -35 V 35V Single Single 100 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS Stock No. 170-3357
Mfr. Part No.MMBFJ310LT1G
SGD0.182
Each (On a Reel of 3000)
units
N 24 → 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS Stock No. 625-5745
Mfr. Part No.MMBFJ310LT1G
SGD0.684
Each (In a Pack of 5)
units
N 24 → 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS Stock No. 166-1831
Mfr. Part No.MMBFJ113
SGD0.14
Each (On a Reel of 3000)
units
N min. 2mA - -35 V 35V Single Single 100 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS Stock No. 773-7813
Mfr. Part No.MMBFJ310LT3G
SGD0.415
Each (In a Pack of 10)
units
N 24 → 60mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 112-5510
Mfr. Part No.PMBFJ177,215
BrandNXP
SGD0.344
Each (In a Pack of 5)
units
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 103-8162
Mfr. Part No.PMBFJ177,215
BrandNXP
SGD0.202
Each (On a Reel of 3000)
units
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 163-0963
Mfr. Part No.MMBFJ177LT1G
SGD0.182
Each (On a Reel of 3000)
units
P 1.5 → 20mA - - 25V dc Single Single 300 Ω Surface Mount SOT-23 3 - 11pF 3.04 x 1.4 x 1.01mm
RS Stock No. 806-1750
Mfr. Part No.J109
SGD0.578
Each (In a Pack of 25)
units
N min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 145-5347
Mfr. Part No.J113
SGD0.10
Each (In a Bag of 1000)
units
N min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 760-3123
Mfr. Part No.2SK208-R(TE85L,F)
BrandToshiba
SGD0.534
Each (In a Pack of 10)
units
N 0.3 → 0.75mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 663-9039
Mfr. Part No.2SK1069-4-TL-E
BrandSanyo
SGD0.38
Each (In a Pack of 5)
units
N - 40 V - -40V Single - - Surface Mount MCP 3 2.1pF 9pF 2 x 1.25 x 0.9mm
RS Stock No. 773-7816
Mfr. Part No.MMBFJ177LT1G
SGD0.353
Each (In a Pack of 10)
units
P 1.5 → 20mA - - 25V dc Single Single 300 Ω Surface Mount SOT-23 3 - 11pF 3.04 x 1.4 x 1.01mm
RS Stock No. 166-2021
Mfr. Part No.J109
SGD0.231
Each (In a Bag of 1000)
units
N min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 806-1766
Mfr. Part No.J113
SGD0.298
Each (In a Pack of 50)
units
N min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
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