Infineon IPD Type P-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD650P06NMATMA1

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Subtotal (1 pack of 2 units)*

SGD5.38

(exc. GST)

SGD5.86

(inc. GST)

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  • 1,160 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8SGD2.69SGD5.38
10 - 98SGD2.555SGD5.11
100 - 248SGD2.43SGD4.86
250 - 498SGD2.305SGD4.61
500 +SGD2.19SGD4.38

*price indicative

Packaging Options:
RS Stock No.:
244-0880
Mfr. Part No.:
IPD650P06NMATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM Power Transistor has Pb-free lead plating, RoHS compliant and is halogen-free according to IEC61249-2-21.

P-Channel

Very low on-resistance RDS(on)

100% avalanche tested

Normal Level

Enhancement mode

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